收藏本站
New Product
SUD17N25-165
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
2.8
2.4
V GS = 10 V
I D = 17 A
100
2.0
T J = 150 °C
1.6
10
1.2
T J = 25 °C
0.8
0.4
- 50
- 25
0 25 50 75 100 125
150
175
1
0
0.3 0.6 0.9
1.2
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
20
100
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
16
12
8
4
10
1
Limited by r DS(on)
T C = 25 °C
Single Pulse
10 μs
100 μs
1 ms
10 ms
100 ms, dc
0
0
25
50 75 100 125
150
175
0.1
0.1
1 10
100
1000
2
T C - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
V DS - Drain-to-Source Voltage (V)
Safe Operating Area
1
0.1
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72851.
www.vishay.com
4
Document Number: 72851
S-71660-Rev. B, 06-Aug-07
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SUD19N20-90-T4-E3 MOSFET N-CH D-S 200V TO252
SUD19P06-60L-E3 MOSFET P-CH D-S 60V TO252
SUD23N06-31-T4-GE3 MOSFET N-CH D-S 60V TO252
SUD23N06-31L-E3 MOSFET N-CH D-S 60V TO252
SUD25N15-52-T4-E3 MOSFET N-CH D-S 150V TO252
SUD35N05-26L-E3 MOSFET N-CH D-S 55V TO252
SUD40N02-08-E3 MOSFET N-CH D-S 20V TO252
SUD50N02-09P-E3 MOSFET N-CH D-S 20V DPAK
相关代理商/技术参数
SUD19N20-90 功能描述:MOSFET 200V 17.5A 100W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD19N20-90_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 175 °C MOSFET
SUD19N20-90-E3 功能描述:MOSFET 200V 17.5A 100W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD19N20-90-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SUD19N20-90T1-E3 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 200V 19A 3PIN TO-252 - Tape and Reel
SUD19N20-90-T4 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R
SUD19N20-90-T4-E3 功能描述:MOSFET N-CH 200V 19A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD19P06-60 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET